Simulation of Thin Film Relaxation by Buried Misfit Networks

The present work is motivated by the idea that the layer deformation in anisotropic elasticity can be estimated from the theory of interfacial dislocations. In effect, this work which is an extension of a previous approach given by one of the authors determines the anisotropic displacement fields and the critical thickness due to a complex biperiodic network of MDs lying just below the free surface in view of the arrangement of dislocations. The elastic fields of such arrangements observed along interfaces play a crucial part in the improvement of the physical properties of epitaxial systems. New results are proposed in anisotropic elasticity for hexagonal networks of MDs which contain intrinsic and extrinsic stacking faults. We developed, using a previous approach based on the relative interfacial displacement and a Fourier series formulation of the displacement fields, the expressions of elastic fields when there is a possible dissociation of MDs. The numerical investigations in the case of the observed system Si/(111)Si with low twist angles show clearly the effect of the anisotropy and thickness when the misfit networks are dissociated. Keywords—Angular misfit, dislocation networks, plane interfaces, stacking faults.